2SC3563

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3563 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ 10 A 40 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3563 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 450 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 600 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.0 V Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V μA Collector Cutoff Current VCB= 500V; IE= 0 100 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 20 hFE-2 DC Current Gain IC= 4A; VCE= 5V 8 isc Website：www.iscsemi.cn 2