2SC3568

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1396 ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3568 · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current(DC) Collector current-peak Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 100 7 10 20 5 30 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=5A ;IB=0.5A;L=1mH IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCB=100V; IE=0 VCE=100V;VBE(OFF)=-1.5V Ta=125℃ VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=5A ; VCE=5V 40 40 20 MIN 100 TYP. 2SC3568 MAX UNIT V 0.6 1.5 10 10 1.0 10 V V μA μA mA μA 200 Switching times ton ts tf Turn-on time Storage time Fall time IC=5A ;IB1=-IB2=0. 5A VCC≈50V;RL=10Ω 0.5 1.5 0.5 μs μs μs hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3568 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3568 4