2SC3570

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3570 DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage ·Fast Switching Speed APPLICATIONS ·Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB B Base Current-Continuous Total Power Dissipation @ TC=25℃ Junction Temperature 2.5 A PC 25 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS)-1 VCEX(SUS)-2 VCE(sat) VBE(sat) ICBO ICER ICEX IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 2.0A ; IB= 0.4A, L= 1mH IC= 2.0A ; IB1=-IB2= 0.4A, L=180μH,clamped IC= 4A; IB1= 0.8A; IB2= -0.4A, L= 180μH,clamped IC= 2A; IB= 0.4A B 2SC3570 MIN 400 450 400 MAX UNIT V V V 1.0 1.2 10 1.0 10 1.0 10 20 10 80 V V μA mA μA mA μA IC= 2A; IB= 0.4A B VCB= 400V; IE= 0 VCE= 400V; RBE= 51Ω, Ta=125℃ VCE= 400V; VBE(off)= -1.5V VCE= 400V; VBE(off)= -1.5V, Ta=125℃ VEB= 5V; IC=0 IC= 0.5A; VCE= 5V IC= 2.0A; VCE= 5V Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 2A ,RL= 75Ω, IB1= -IB2= 0.4A, VCC≈ 150V 1.0 2.0 0.7 μs μs μs hFE-2 Classifications M 20-40 L 30-60 K 40-80 isc Website：www.iscsemi.cn 2