2SC3590

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3590 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) ·Fast Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A IB B Base Current-Continuous Total Power Dissipation @ TC=25℃ Junction Temperature 4 A PT 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3590 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 IC= 1mA; RBE= ∞ 330 V V(BR)CEO Collector-Emitter Breakdown Voltage 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 6 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.8 V Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V μA μA Collector Cutoff Current VCB= 180V; IE= 0 100 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 hFE-1 DC Current Gain IC= 1A; VCE= 1V 15 hFE-2 DC Current Gain IC= 5A; VCE= 1V 10 50 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V IC= 5A, IB1= -IB2= 0.5A 40 MHz μs tf Fall Time 0.3 isc Website：www.iscsemi.cn 2