2SC3657

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3657 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB B Base Current-Continuous 2 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 5 A PC 80 W ℃ TJ 150 Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 10mA; IB= 0 MIN 2SC3657 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.0 V Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V μA Collector Cutoff Current VCB= 800V; IE= 0 100 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1 mA hFE DC Current Gain IC= 1A; VCE= 5V 10 Switching times μs μs μs tr tstg tf Rise Time IC= 1A; IB1= -IB2= -0.4A; RL= 400Ω; VCC≈ 400V 1.0 Storage Time 2.5 Fall Time 1.0 hFE-1 Classifications K 10-20 L 15-30 M 20-40 isc Website：www.iscsemi.cn 2