2SC3658

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3658 DESCRIPTION ・With TO-3 package ・High voltage ,high speed ・Built-in damper diode APPLICATIONS ・For color TV horizontal deflection output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open collector VALUE 1500 6 5 6 50 150 -45~150 UNIT V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3658 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=5A; IB=1.25A 2.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1.25A 1.5 V ICBO Collector cut-off current VCB=1200V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 500 mA hFE DC current gain IC=1A ; VCE=5V 8 VECF Diode forward voltage IF=6A 2.0 V μs tf Fall time IC=5A ; IB1=1A;IB2=-2.5A;LB=0 0.5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3658 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3