2SC3659

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3659 DESCRIPTION ·High Breakdown Voltage: VCES= 1700V (Min) ·Built-in Damper Didoe APPLICATIONS ·Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3659 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 1.5 V ICBO Collector Cutoff Current VCE= 1400V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 500 mA VECF C-E Diode Forward Voltage IF= 6A 2.0 V tf Fall Time IC= 5A, IB1= 1A, IB2= -2.5A, LB= 0 0.5 μs isc Website：www.iscsemi.cn 2