2SC3685

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・High reliability ・Fast speed APPLICATIONS ・Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3685 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 6 16 125 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3685 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=1A 5 V VBEsat Base-emitter saturation voltage IC=4A ;IB=1A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0 1 mA IEBO Emitter cut-off current VEB=4V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 8 Switching times μs μs tstg Storage time IC=4A;IB1=0.8A; IB2=-1.6A V CC=200V 3.0 tf Fall time 0.1 0.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3685 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3685 4