2SC3691

2SC3691

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SC3691 - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2SC3691 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3691 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ 2.5 A 25 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat) -2 VBE(sat) -1 VBE(sat) -2 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 3A ; IB= 0.3A, L= 1mH IC= 3A; IB= 0.15A B 2SC3691 MIN 60 TYP. MAX UNIT V 0.3 0.5 1.2 1.5 10 10 1.0 10 100 100 60 150 70 200 400 V V V V μA μA mA μA IC= 4A; IB= 0.2A B IC= 3A; IB= 0.15A B IC= 4A; IB= 0.2A B VCB= 60V; IE= 0 VCE= 60V; VBE= -1.5V Ta=125℃ VEB= 5V; IC= 0 IC= 0.5A ; VCE= 2V IC= 1A ; VCE= 2V IC= 3A ; VCE= 2V IC= 0.5A ; VCE= 10V IE=0 ; VCB= 10V;ftest= 1.0MHz MHz pF Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 3A ; IB1= -IB2= 0.15A RL= 17Ω;VCC≈50V 0.3 1.5 0.3 μs μs μs hFE-2 classifications M 100-200 L 150-300 K 200-400 isc Website:www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3691 isc Website:www.iscsemi.cn 3
2SC3691
1. 物料型号: - 型号为2SC3691。

2. 器件简介: - 该器件是一个硅NPN功率晶体管,具有低集电极饱和电压、高开关速度,适用于高速功率开关应用。

3. 引脚分配: - 引脚1:基极(BASE) - 引脚2:集电极(COLLECTOR) - 引脚3:发射极(EMITTER)

4. 参数特性: - 集电极-基极电压(VCBO):100V - 集电极-发射极电压(VCEO):60V - 发射极-基极电压(VEBO):7V - 集电极电流-连续(Ic):5A - 集电极电流-峰值(ICM):10A - 基极电流-连续(IB):2.5A - 集电极功耗@Tc=25°C:25W - 结温(TJ):150℃ - 存储温度范围(Tstg):-55~150℃

5. 功能详解: - 该晶体管支持高速开关应用,具有低集电极饱和电压和高开关速度。

6. 应用信息: - 设计用于高速和功率开关应用。

7. 封装信息: - 封装为TO-220Fa,具体尺寸参数如下: - A: 16.85mm~17.15mm - B: 9.90mm~10.10mm - C: 4.35mm~4.65mm - 等等。
2SC3691 价格&库存

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