2SC3692

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3692 DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For use in drivers such as DC/DC Converters and actuators PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PT Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 100 60 7 7 14 3.5 2.0 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=4A; IB=0.4A,L=1mH IC=4A; IB=0.2 A IC=6A; IB=0.3A IC=4A; IB=0.2 A IC=6A; IB=0.3A VCB=60V; IE=0 VCE=60V; VBE=-1.5V Ta=125℃ VEB=5V; IC=0 IC=0.7A ; VCE=2V IC=1.5A ; VCE=2V IC=4A ; VCE=2V IE=0; VCB=10V;f=1MHz IC=1A ; VCE=10V 100 100 60 100 150 200 MIN 60 2SC3692 TYP. MAX UNIT V 0.3 0.5 1.2 1.5 10 10 1.0 10 V V V V μA μA mA μA 400 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=4A;RL=12.5Ω IB1=-IB2=0.2A VCC≈50V 0.3 1.5 0.3 μs μs μs hFE-2 classifications M 100-200 L 150-300 K 200-400 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3692 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3