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2SC3693

2SC3693

  • 厂商:

    ISC(固电半导体)

  • 封装:

    TO-220FA

  • 描述:

    硅NPN功率晶体管

  • 数据手册
  • 价格&库存
2SC3693 数据手册
isc Silicon NPN Power Transistor 2SC3693 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 8A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 5 A Collector Power Dissipation @ TC=25℃ 30 Collector Power Dissipation @ Ta=25℃ 2 PC TJ Tstg Junction Temperature Storage Temperature Range isc website:www.iscsemi.com W 150 ℃ -55~150 ℃ 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3693 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A 0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A; IB= 0.4A 1.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 10 μA ICEX Collector Cutoff Current VCE= 60V; VBE= -1.5V Ta=125℃ 10 1.0 μA mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A; VCE= 2V 100 hFE-2 DC Current Gain IC= 2A; VCE= 2V 100 hFE-3 DC Current Gain IC= 6A; VCE= 2V 60 Current-Gain—Bandwidth Product IC=1A; VCE= 10V 140 MHz Output Capacitance IE=0; VCB= 10V; ftest= 1.0MHz 150 pF fT COB 60 UNIT V 200 400 Switching times ton Turn-on Time tstg Storage Time tf  IC= 6A; IB1= -IB2= 0.3A; RL= 8.3Ω; VCC≈ 50V Fall Time 0.3 μs 1.5 μs 0.3 μs hFE-2 classifications M L K 100-200 150-300 200-400 isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3693 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 3 isc & iscsemi is registered trademark
2SC3693 价格&库存

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2SC3693
    •  国内价格
    • 1+9.31500
    • 10+8.97000
    • 100+8.14200
    • 500+7.72800

    库存:0