2SC3719

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3719 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 3 A PC 150 W Tj 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3719 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 2.0 V hFE DC Current Gain IC= 2A; VCE= 5V 6 20 ICBO Collector Cutoff Current VCB= 1000V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA Switching Times ton Turn-On Time IC= 2A; IB1= 0.4A; IB2= -0.8A; VCC= 250V 1.0 μs tstg Storage Time 3.5 μs tf Fall Time 0.3 μs isc Website：www.iscsemi.cn