2SC3729

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3729 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 16 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3729 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 800 V V(BR)EBO Emitter-Base Breakdown voltage IE= 10mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 1.5 V ICES Collector Cutoff Current VCE= 1500V; RBE= 0 0.5 mA hFE DC Current Gain IC= 1A; VCE= 5V 8 isc Website：www.iscsemi.cn 2