2SC3737

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3737 DESCRIPTION ·High Collector-Base Breakdown Voltage: V(BR)CBO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC ICM Collector Current-Continuous 5 A Collector Current-Peak 8 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ 3 A 100 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 150 ℃ ℃ Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 10mA; IB= 0 IC= 2A; IB= 0.4A B 2SC3737 MIN 800 TYP. MAX UNIT V 1.5 2.0 100 100 6 20 V V μA μA IC= 2A; IB= 0.4A B VCB= 1000V; IE= 0 VEB= 6V; IC= 0 IC= 2A; VCE= 5V Switching times ton tstg tf Turn-On Time Storage Time Fall Time IC= 2A; IB1= 0.4A, IB2= -0.8A; VCC= 250V 1.0 3.5 0.3 μs μs μs isc Website：www.iscsemi.cn 2