2SC3743

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3743 DESCRIPTION ·Collector-Emiiter Breakdown Voltage: V(BR)CEO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switching · APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC ICM Collector Current-Continuous 2 A Collector Current-Peak 4 A IB B Base Current-Continuous Collector Power Dissipation @Ta=25℃ 1 A 2 W PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 40 150 ℃ ℃ Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3743 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 0.6 V Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 1.2 V μA μA Collector Cutoff Current VCB= 900V; IE= 0 VEB= 7V; IC= 0 50 Emitter Cutoff Current 50 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 6 hFE-2 DC Current Gain IC= 0.8A; VCE= 5V 6 Switching Times μs μs μs ton ts tf Turn-on Time IC= 0.8A; IB1= 0.16A;IB2= -0.32A; VCC= 250V 1.0 Storage Time 4.0 Fall Time 1.0 isc Website：www.iscsemi.cn