2SC3746

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1469 ・Low saturation voltage ・Excellent current dependence of hFE ・Short switching time APPLICATIONS ・Various inductance of lamp drivers for electronic equipment ・Inverters ,converters ・Switching regulator ,driver PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC3746 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 5 7 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=10mA ;IE=0 IE=10mA ;IC=0 IC=2.5A;IB=0.125A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=1A ; VCE=5V 70 100 MIN 60 80 5 2SC3746 TYP. MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=2.0A; IB1=-IB2=0.1A VCC=20V ,RL=10Ω 0.1 0.5 0.1 μs μs μs hFE Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3746 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3746 4