2SC3748

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Low saturation voltage. ・Excellent dependence of hFE on current. ・Fast switching speed. APPLICATIONS ・Car-use inductance drivers, lamp drivers. ・Inverters drivers, conveters (strobes, flashes, FLT lighting circuits). ・Power amplifiers ・High-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3748 ・ Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 10 12 2 PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3748 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA; IE=0 IC=1mA; RBE=∞ IE=1mA; IC=0 IC=5A; IB=0.25A VCB=40V ;IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=1A ; VCE=5V 70 100 MIN 80 60 5 0.4 100 100 280 MHz TYP. MAX UNIT V V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time VCC=20V; IC=5A IB1=-IB2=0.25A RL=4Ω 0.1 0.5 0.1 μs μs μs hFE Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3748 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3748 4