2SC3749

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3749 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 500V(Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 6 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 1 A PC 25 W TJ 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 5mA; RBE= ∞ IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A VCB= 500V; IE= 0 VEB= 5V; IC= 0 IC= 0.3A; VCE= 5V IC= 1.5A; VCE= 5V IE= 0; VCB= 10V; f= 1MHz IC= 0.3A; VCE= 10V 15 8 MIN 500 800 7 2SC3749 TYP. MAX UNIT V V V 1.0 1.5 10 10 50 V V μA μA 50 18 pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 2A, IB1= 0.4A; IB2= -0.8A; RL= 100Ω; VCC= 200V 0.5 3.0 0.3 μs μs μs hFE-1 Classifications L 15-30 M 20-40 N 30-50 isc Website：www.iscsemi.cn 2