2SC3750

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3750 DESCRIPTION ・With TO-220F package ・High breakdown voltage and high reliability. ・Fast switching speed. ・Wide area of safe operation APPLICATIONS ・500V/5A switching regulator applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 800 500 7 5 10 2 30 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.6A ; VCE=5V IC=3A ; VCE=5V IC=0.6A ; VCE=10V f=1MHz;VCB=10V 15 8 MIN 500 800 7 2SC3750 TYP. MAX UNIT V V V 1.0 1.5 10 10 50 V V μA μA 18 80 MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=4A; IB1=0.8A;IB2=-1.6A VCC=200V ,RL=50Ω 0.5 3.0 0.3 μs μs μs hFE-1 Classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3750 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3750 4