2SC3752

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3752 DESCRIPTION ・With TO-220F package ・High breakdown voltage and high reliability. ・Fast switching speed. ・Wide ASO(Safe Operating Area) APPLICATIONS ・800V/3A switching regulator applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1100 800 7 3 10 1.5 30 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=1.5A; IB=0.3A IC=1.5A ;IB=0.3A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.2A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V f=1MHz;VCB=10V 10 8 15 60 MIN 800 1100 7 TYP. 2SC3752 MAX UNIT V V V 2.0 1.5 10 10 40 V V μA μA MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=2.0A; IB1=0.4A;IB2=-0.8A VCC=400V ,RL=200Ω 0.5 3.0 0.3 μs μs μs hFE-1 Classifications K 10-20 L 15-30 M 20-40 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3752 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3752 4