2SC3762

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3762 DESCRIPTION ・With TO-3PML package ・High speed switching ・High current capability APPLICATIONS ・For use in high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS MAX 150 100 6 15 65 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3762 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A 0.6 V VBEsat Base-emitter saturation voltage IC=10A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=100V ;IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 10 μA hFE DC current gain IC=5A ; VCE=5V 30 120 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3762 Fig.2 outline dimensions 3