2SC3783

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3783 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·High Switching Speed APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC ICM Collector Current-Continuous 5 A Collector Current-Pulse 7 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 3 A PC 100 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3783 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V Collector Cutoff Current VCB= 800V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 10mA; VCE= 5V 10 hFE-2 DC Current Gain IC= 3A; VCE= 5V 10 Switching times μs μs μs ton Turn-on Time VCC≈ 400V, IB1= 0.3A; IB2= -0.8A RL= 133Ω;PW=20μs; Duty Cycle≤1% 1.0 tstg Storage Time 3.5 tf Fall Time 1.0 isc Website：www.iscsemi.cn 2