2SC3798

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3798 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching · APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO IC Emitter-Base Voltage 8 V Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB B Base Current-Continuous Collector Power Dissipation @Ta=25℃ 3 A 3 W PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 70 150 ℃ ℃ Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3798 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH 500 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V μA μA Collector Cutoff Current VCB= 800V; IE= 0 VEB= 5V; IC= 0 100 Emitter Cutoff Current 100 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 15 hFE-2 DC Current Gain IC= 3A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 1MHz 8 MHz Switching Times μs μs μs ton ts tf Turn-on Time IC= 3A; IB1= -IB2= 0.6A; VCC= 200V 1.0 Storage Time 3.0 Fall Time 1.0 isc Website：www.iscsemi.cn