2SC3830

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3830 · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 600 500 10 6 12 2 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA ; IB=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=600V ;IE=0 VEB=10V; IC=0 IC=2A ; VCE=4V IC=0.5A ; VCE=12V f=1MHz ; VCB=10V 10 8 45 MIN 500 2SC3830 TYP. MAX UNIT V 0.5 1.3 1 100 30 V V mA μA MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time VCC=200V; IC=2A IB1=0.2A; IB2=-0.4A; RL=100Ω 1.0 4.5 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3830 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830 4