INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3835G
DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) ·Good Linearity of hFE
APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
8
V
IC ICM
Collector Current-Continuous
7
A
Collector Current-Pulse
14
A
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
3
A
PC
70
W ℃ ℃
TJ
150
Tstg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 50mA ; IB= 0 IC= 3A; IB= 0.3A
B
2SC3835G
MIN 120
TYP.
MAX
UNIT V
0.5 1.2 100 100 160 30 110 220
V V μA μA
IC= 3A; IB= 0.3A
B
VCB= 200V; IE= 0 VEB= 8V; IC= 0 IC= 3A ; VCE= 4V IE= -0.5A ; VCE= 12V IE=0 ; VCB=10V;ftest=1.0MHz
MHz pF
Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 3A ;IB1=0.3A; IB2= -0.6A RL= 16.7Ω; VCC= 50V 0.5 3.0 0.5 μs μs μs
isc Website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3835G
isc Website:www.iscsemi.cn
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