Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3842
DESCRIPTION ・With TO-3PML package ・High voltage ,high speed ・High current capability APPLICATIONS ・For use in TV horizontal output and Power switching applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS MAX 600 400 6 10 70 150 -55~150 UNIT V V V A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3842
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
600
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=500V ;IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=5A ; VCE=5V
10
40
fT
Transition frequency
IC=1A ; VCE=10V
32
MHz
COB
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
100
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3842
Fig.2 outline dimensions
3
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