2SC3850

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3850 DESCRIPTION ・With TO-3PN package ・Good linearity of hFE ・Low collector saturation voltage APPLICATIONS ・For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 125 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 20 30 6 2.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.5A ;L=25mH IC=10A ;IB=2A IC=10A ;IB=2A VCB=500V ;IE=0 VEB=7V; IC=0 IC=2A ; VCE=5V IC=10A ; VCE=5V IC=1A ; VCE=10V 15 10 15 MIN 400 2SC3850 TYP. MAX UNIT V 1.0 1.5 100 100 V V μA μA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=10A IB1=-IB2=2A VCC=125V 1.0 2.5 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3850 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3