2SC3852

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3852 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·DC Current Gain: hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 1 A PC 25 W ℃ TJ 150 Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3852 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 50mA 0.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Gain IC= 0.5A; VCE= 4V 200 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF fT Current-Gain—Bandwidth Product IE= -0.2A; VCE= 12V 15 MHz Switching Times ton Turn-On Time IC= 1A; IB1= 15mA; IB2= -30mA; VCC= 20V; RL= 20Ω 0.8 μs tstg Storage Time 3.0 μs tf Fall Time 1.2 μs isc Website：www.iscsemi.cn 2