2SC3853

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3853 DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1489 APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 120 80 6 6 60 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3853 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.5 V μA μA ICBO Collector cut-off current VCB=120V; IE=0 100 IEBO Emitter cut-off current VEB=6V; IC=0 100 hFE DC current gain IC=2A ; VCE=4V 50 fT Transition frequency IC=0.5A ; VCE=12V 20 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3853 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3