2SC3856

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1492 APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 200 180 6 15 4 130 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3856 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 180 V VCEsat ICBO Collector-emitter saturation voltage IC=5A ;IB=0.5A VCB=200V ;IE=0 2.0 V μA μA Collector cut-off current 100 IEBO Emitter cut-off current VEB=6V; IC=0 100 hFE DC current gain IC=3A ; VCE=4V 50 180 COB Output capacitance IE=0 ; VCB=10V,f=1MHz 300 pF fT Transition frequency IC=0.5A ; VCE=12V 20 MHz Switching times μs μs μs ton Turn-on time IC=10A;RL=4Ω IB1=- IB2=1A VCC=40V 0.50 ts Storage time 1.80 tf Fall time 0.60 hFE Classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3856 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3856 4