Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3857
DESCRIPTION ・With MT-200 package ・Complement to type 2SA1493 APPLICATIONS ・Audio and general purpose
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
・
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 200 200 6 15 5 150 150 -55~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=10 A;IB=1 A VCB=200V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IE=-0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 20 250 MIN 200 TYP.
2SC3857
MAX
UNIT V
3.0 100 100 180
V μA μA
MHz pF
Switching times ton ts tf Turn-on time Storage time Fall time IC=5A;RL=12Ω IB1=- IB2=0.5A VCC=60V 0.30 2.40 0.40 μs μs μs
hFE classifications O 50-100 P 70-140 Y 90-180
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3857
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3857
4
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