2SC3858

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3858 DESCRIPTION ・With MT-200 package ・Complement to type 2SA1494 APPLICATIONS ・Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION ・ Absolute maximum ratings (Ta=25°C) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 200 200 6 17 5 200 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=10 A;IB=1 A VCB=200V; IE=0 VEB=6V; IC=0 IC=8A ; VCE=4V IC=1A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 20 MIN 200 2SC3858 TYP. MAX UNIT V 2.5 100 100 180 V μA μA MHz pF 300 Switching times ton ts tf Turn-on time Storage time Fall time IC=10A;RL=4Ω IB1=- IB2=1A VCC=40V 0.50 1.80 0.60 μs μs μs hFE classifications Y 50-100 P 70-140 G 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3858 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3858 4