2SC3871

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3871 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching · APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO IC Emitter-Base Voltage 7 V Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB B Base Current-Continuous Collector Power Dissipation @Ta=25℃ 5 A 2 W PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 45 150 ℃ ℃ Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3871 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.0 V Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V μA μA Collector Cutoff Current VCB= 500V; IE= 0 VEB= 5V; IC= 0 100 Emitter Cutoff Current 100 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 15 hFE-2 DC Current Gain IC= 5A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 25 MHz Switching Times μs μs μs ton ts tf Turn-on Time IC= 5A; IB1= 1A; IB2= -2A; VCC= 150V 0.7 Storage Time 2.0 Fall Time 0.3 isc Website：www.iscsemi.cn