2SC3874

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3874 DESCRIPTION ・With TO-3PL package ・High speed switching ・High VCBO ・Wide area of safe operation APPLICATIONS ・For high-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 150 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 15 25 5 3.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=10A ;IB=2A IC=10A ;IB=2A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=10A ; VCE=5V IC=1A ; VCE=10V;f=1MHz 15 8 MIN 400 2SC3874 TYP. MAX UNIT V 1.0 1.5 100 100 V V μA μA 20 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=10A; VCC=150V IB1=2A;IB2=-4A 0.7 2.0 0.3 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3874 Fig.2 Outline dimensions (unindicated tolerance:±0.50mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3874 4