2SC3884

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3884 DESCRIPTION ·High Breakdown Voltage: VCBO= 1400V (Min) ·High Switching Speed APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1400 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A ICM Collector Current- Peak 12 A IB B Base Current- Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 3 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3884 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A B 1.5 V ICBO Collector Cutoff Current VCB= 1400V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 1A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 210 pF Switching Times , Resistive load tstg Storage Time ICP= 4A, IB1= 0.8A; IB2= -1.6A; RL= 50Ω 2.5 μs tf Fall Time 0.15 μs isc Website：www.iscsemi.cn 2