2SC3886A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed APPLICATIONS ·Horizontal deflection output for high resolution display ·High speed switching regulator output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 8 15 4 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3886A TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0 600 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.5A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.5A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA μA IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=1A ; VCE=5V 8 15 fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 210 pF μs μs ts Storage time tf Fall time Resistive load ICP=6A ;IB1=-IB2=1.2A RL=33.3Ω 2.5 0.15 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3886A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3