2SC3890

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3890 DESCRIPTION ·With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 500 400 10 7 14 2 30 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=10V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V f=1MHz;VCB=10V 10 MIN 400 2SC3890 TYP. MAX UNIT V 0.5 1.3 100 100 30 10 50 V V μA μA MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=3.0A; IB1=0.3A;IB2=-0.6A VCC=200V ,RL=66Ω 1.0 3.0 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3890 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3890 4