2SC3892

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3892 DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1400 600 5 7 14 3.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3892 TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V VCEsat VBEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A IC=5A ;IB=1.2A 5.0 V Base-emitter saturation voltage 1.5 V μA ICBO Collector cut-off current VCB=500V; IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 66 200 mA hFE DC current gain IC=1A ; VCE=5V 8 12 fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz IF=5A 210 pF VF ts Diode forward voltage 2.0 V μs μs Storage time Resistive load ICP=5A ;IB1=1A;IB2=-2A;RL=40Ω 2.5 tf Fall time 0.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3892 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3