2SC3894

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3894 DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector MAX 1500 800 6 6 16 3.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3894 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 800 V VCEsat VBEsat Collector-emitter saturation voltage IC=4A ;IB=1A IC=4A ;IB=1A 5.0 V Base-emitter saturation voltage 1.5 V μA ICBO Collector cut-off current VCB=800V ;IE=0 10 ICES Collector cut-off current VCE=1500V; RBE=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=4A ; VCE=5V 4 8 Switching times μs μs tstg Storage time tf Fall time IC=4A ; VCC=200V IB1=0.8A; IB2=1.6A RL=50Ω 3.0 0.1 0.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3894 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3894 4