2SC3896

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3896 DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 70 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector MAX 1500 800 6 8 25 3.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC3896 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 800 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.5A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.5A 1.5 V μA ICBO Collector cut-off current VCB=800V ;IE=0 10 ICES Collector cut-off current VCE=1500V; RBE=0 1.0 mA IEBO Emitter cut-off current VEB=4V ;IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=6A ; VCE=5V 4 8 Switching times μs μs tstg Storage time tf Fall time IC=6A ; VCC=200V IB1=1.2A; IB2=2.4A RL=33.3Ω 3.0 0.1 0.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3896 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3896 4