2SC3897

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3897 DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 70 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS MAX 1500 800 6 10 25 3.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(SUS)CEO VCEsat VBEsat ICBO ICES IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ;IB=0 IC=8A ;IB=2A IC=8A ;IB=2A VCB=800V ;IE=0 VCE=1500V; RBE=0 VEB=4V ;IC=0 IC=1A ; VCE=5V IC=8A ; VCE=5V 8 4 MIN 800 2SC3897 TYP. MAX UNIT V 5.0 1.5 10 1.0 1.0 V V μA mA mA 8 Switching times tstg tf Storage time Fall time 3.0 0.1 0.2 μs μs IC=6A ; VCC=200V IB1=1.2A; IB2=2.4A RL=33.3Ω 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3897 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3897 4