2SC3907

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1516 APPLICATIONS ·Audio and general purpose power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3907 · Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 180 180 5 12 1.2 130 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=8 A;IB=0.8 A IC=7A ; VCE=5V VCB=180V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 55 35 MIN 180 2SC3907 TYP. MAX UNIT V 0.3 1.0 2.0 1.5 5 5 180 V V μA μA 30 270 MHz pF hFE-1 classifications R 55-110 O 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3907 Fig.2 Outline dimensions 3