2SC3927

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3927 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 550V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base voltage 7 V IC ICM Collector Current-Continuous 10 A Collector Current-Peak 15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 5 A PC 120 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 10mA ; IB= 0 IC= 5A; IB= 1A B 2SC3927 MIN 550 TYP. MAX UNIT V 0.5 1.2 0.1 0.1 10 6 105 28 V V mA mA IC= 5A; IB= 1A B VCB= 800V ; IE= 0 VEB= 7V; IC= 0 IC= 5A ; VCE= 4V IE= -1A ; VCE= 12V IE= 0 ; VCB= 10V; ftest= 1.0MHz MHz pF Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 5A , IB1= 0.75A; IB2= -1.5A RL= 50Ω; VCC= 250V 1.0 5.0 0.5 μs μs μs isc Website：www.iscsemi.cn 2