2SC3942

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3942 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ 0.2 A 10 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 10μA; IE= 0 IC= 1mA; IB= 0 B 2SC3942 MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage 300 V V(BR)CEO Collector-Emitter Breakdown Voltage 300 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 7 V VCE(sat) VBE(on) ICEO Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA IC= 30mA ; VCE= 10V VCE= 200V; IB= 0 1.5 V Base-Emitter On Voltage 1.2 V μA Collector Cutoff Current 10 hFE DC Current Gain IC= 5mA; VCE= 50V 50 250 fT Current-Gain—Bandwidth Product IC= 20mA; VCE= 30V 70 MHz COB Output Capacitance IE= 0; VCB= 30V, ftest= 1MHz 2.7 pF isc Website：www.iscsemi.cn 2