2SC3947

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3947 DESCRIPTION ・With TO-3PML package ・High voltage ,high speed APPLICATIONS ・For TV horizontal output and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS MAX 850 500 7 5 8 2 70 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=10mA ;RBE=∞ MIN TYP. 2SC3947 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage 500 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 850 V Emitter-base breakdown voltage 7 V VCEsat Collector-emitter saturation voltage IC=2.5A ;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A ;IB=0.5A VCE=800V; IE=0 TC=100℃ VEB=6V ;IC=0 1.5 0.1 1.0 0.1 V ICBO Collector cut-off current mA IEBO Emitter cut-off current mA hFE fT DC current gain IC=2.5A ; VCE=5V IC=0.5A ; VCE=10V 10 30 Transition frequency 20 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 70 pF Switching times μs μs μs tr Rise time IC=2.5A ; VCC=250V IB1=0.5A; IB2=-1A 0.5 tstg Storage time 3.0 tf Fall time 0.3 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3947 Fig.2 outline dimensions 3