2SC3949

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION ・With TO-3PML package ・High voltage ,high speed APPLICATIONS ・For TV horizontal output and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS MAX 850 500 7 15 80 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=10mA ;RBE=∞ MIN TYP. 2SC3949 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage 500 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 850 V Emitter-base breakdown voltage 7 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A VCE=800V; IE=0 TC=100℃ VEB=6V ;IC=0 1.5 0.1 1.0 0.1 V ICBO Collector cut-off current mA IEBO Emitter cut-off current mA hFE fT DC current gain IC=10A ; VCE=5V IC=2A ; VCE=10V 10 30 Transition frequency 20 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 260 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3949 Fig.2 outline dimensions 3