2SC3962

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3962 DESCRIPTION ・With TO-220C package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 5 10 2 40 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3962 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 400 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ; IE=0 IE=1mA ; IC=0 500 V Emitter-base breakdown voltage 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.3 V μA μA ICBO Collector cut-off current VCB=500V ;IE=0 100 IEBO Emitter cut-off current VEB=7V; IC=0 100 hFE DC current gain IC=0.5A ; VCE=5V 15 50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3962 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3