2SC3969

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3969 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ 4 A 20 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 1.0A ; IB1= 0.1A, L= 1mH IC= 50μA; IE= 0 IC= 1mA; IB= 0 B 2SC3969 MIN 400 400 400 7 TYP. MAX UNIT V V V V IE= 50μA; IC= 0 IC= 1A; IB= 0.2A B 1.0 1.5 10 10 25 10 30 50 V V μA μA IC= 1A; IB= 0.2A B VCB= 400V; IE= 0 VEB= 7V; IC= 0 IC= 0.1A ; VCE= 5V IE= -0.1A ; VCE= 10V IE= 0; VCB= 10V; f= 1.0MHz MHz pF Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 0.8A ; IB1= -IB2= 0.08A; RL= 250Ω;VCC≈ 200V 1.0 2.5 1.0 μs μs μs isc Website：www.iscsemi.cn 2