INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3969
DESCRIPTION ·Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V (Min) ·High Switching Speed
APPLICATIONS ·Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak Collector Power Dissipation @ TC=25℃
4
A
20 W
PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 1.0A ; IB1= 0.1A, L= 1mH IC= 50μA; IE= 0 IC= 1mA; IB= 0
B
2SC3969
MIN 400 400 400 7
TYP.
MAX
UNIT V V V V
IE= 50μA; IC= 0 IC= 1A; IB= 0.2A
B
1.0 1.5 10 10 25 10 30 50
V V μA μA
IC= 1A; IB= 0.2A
B
VCB= 400V; IE= 0 VEB= 7V; IC= 0 IC= 0.1A ; VCE= 5V IE= -0.1A ; VCE= 10V IE= 0; VCB= 10V; f= 1.0MHz
MHz pF
Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 0.8A ; IB1= -IB2= 0.08A; RL= 250Ω;VCC≈ 200V 1.0 2.5 1.0 μs μs μs
isc Website:www.iscsemi.cn
2
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