2SC3970A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High speed switching ・High VCBO ・Wide area of safe operation APPLICATIONS ・For high breakdown voltate ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3970 2SC3970A ・ Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SC3970 VCBO Collector-base voltage 2SC3970A VCEO VEBO IC ICM IB Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open base Open collector Open emitter 900 500 8 1.5 3.0 0.5 25 W V V A A A CONDITIONS VALUE 800 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC3970 ICBO Collector cut-off current 2SC3970A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.6A ; VCE=5V CONDITIONS IC=10mA , IB=0 IC=0.6A; IB=0.17A IC=0.6A; IB=0.17A VCB=800V; IE=0 2SC3970 2SC3970A MIN 500 TYP. MAX UNIT V 1.0 1.5 V V 0.1 mA 0.1 15 8 20 mA IC=0.1A ; VCE=10V;f=1MHz MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=0.6A; IB1=0.17A IB2=-0.34A;VCC=200V 1.0 3.0 0.3 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3970 2SC3970A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3970 2SC3970A 4