2SC3974

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3974 DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching ·Wide area of safe operation APPLICATIONS ·For high voltage,and high speed Switching applications. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Max.operating junction temperature Storage temperature 3 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 800 500 5 7 15 4 80 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=4A ; VCE=5V IC=0.5A ; VCE=10V,f=1MHz 15 8 20 MIN 500 TYP. 2SC3974 MAX UNIT V 1.0 1.5 0.1 0.1 V V mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=4A ;IB1=0.8A ,IB2=-1.6A VCC=200V 1.0 3.0 0.3 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3974 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3